BSS192,115 NXP Semiconductors, BSS192,115 Datasheet - Page 6
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BSS192,115
Manufacturer Part Number
BSS192,115
Description
MOSFET P-CH 240V 0.2A SOT89
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192115.pdf
(12 pages)
Specifications of BSS192,115
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Mounting Type
Surface Mount
Power - Max
1W
Fet Type
MOSFET P-Channel, Metal Oxide
Vgs(th) (max) @ Id
2.8V @ 1mA
Current - Continuous Drain (id) @ 25° C
200mA
Drain To Source Voltage (vdss)
240V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 Ohm @ 200mA, 10V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
12 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
200 mS, 60 mS
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933943950115::BSS192 T/R::BSS192 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS192,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
2002 May 22
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
I
Fig.10 Temperature coefficient of drain-source
k
D
= 200 mA; V
=
2.5
k
1.5
0.5
---------------------------------------- -
R
2
1
0
DSon
R
50
DSon
on-state resistance; typical values.
at 25 C
at T
GS
j
= 10 V.
0
50
100
T j (
MDA181
o
C)
150
6
Product specification
BSS192