BUK7880-55,135 NXP Semiconductors, BUK7880-55,135 Datasheet - Page 8

• Manufacturer Part Number: BUK7880-55,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050520135; BUK7880-55 /T3; BUK7880-55 /T3

NXP Semiconductors
BUK7880-55
Product data sheet
Fig 14. Gate-source voltage as a function of gate
V
(V)
GS
12
8
4
0
charge; typical values
T
0
j
= 25 °C; I
D
V
5
= 7 A
DS
= 14 V
10
V
Q
DS
All information provided in this document is subject to legal disclaimers.
G
003aaf280
(nC)
= 44 V
15
Rev. 3 — 21 April 2011
Fig 15. Source (diode forward) current as a function of
(A)
I
F
40
30
20
10
0
source-drain (diode forward) voltage; typical
values
V
0
GS
N-channel TrenchMOS standard level FET
= 0 V
T
j
= 150 °C
0.5
1.0
T
j
= 25 °C
BUK7880-55
1.5
© NXP B.V. 2011. All rights reserved.
V
SDS
003aaf281
(V)
2.0
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