PHD9NQ20T,118 NXP Semiconductors, PHD9NQ20T,118 Datasheet - Page 4

• Manufacturer Part Number: PHD9NQ20T,118
• Description: MOSFET N-CH 200V 8.7A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHD9NQ20T,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 959pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 88000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055766118; PHD9NQ20T /T3; PHD9NQ20T /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHD9NQ20T
Product data sheet
Symbol
R
R
Fig 5.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
1
10
−6
All information provided in this document is subject to legal disclaimers.
0.2
0.1
0.05
0.02
δ
= 0.5
single pulse
10
Rev. 03 — 16 December 2010
−5
Conditions
mounted on printed-circuit board ;
minimum footprint
10
−4
10
−3
P
10
−2
t
p
T
10
N-channel TrenchMOS standard level FET
003aae677
−1
δ =
t
p
(s)
T
t
t
p
1
Min
-
-
PHD9NQ20T
Typ
-
50
© NXP B.V. 2010. All rights reserved.
Max
1.7
-
Unit
K/W
K/W
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