PSMN027-100PS,127 NXP Semiconductors, PSMN027-100PS,127 Datasheet

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PSMN027-100PS,127

Manufacturer Part Number
PSMN027-100PS,127
Description
MOSFET N-CH 100V SOT78
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN027-100PS,127

Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
103W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
30nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
37A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26.8 mOhm @ 15A, 10V
Gate Charge Qg
30 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
48 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
37 A
Power Dissipation
103 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934064326127
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol Parameter
V
I
P
T
Avalanche ruggedness
E
Dynamic characteristics
Q
Q
Static characteristics
R
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
PSMN027-100PS
N-channel 100V 26.8 mΩ standard level MOSFET in TO220
Rev. 02 — 19 February 2010
drain-source voltage T
drain current
total power
dissipation
junction temperature
non-repetitive
drain-source
avalanche energy
gate-drain charge
total gate charge
drain-source
on-state resistance
Quick reference
T
Conditions
see
T
V
I
unclamped; R
V
V
see
V
T
V
T
D
j
mb
mb
j
j
GS
GS
DS
GS
GS
≥ 25 °C; T
= 37 A; V
= 100 °C; see
= 25 °C; see
= 25 °C; V
Figure 1
= 25 °C; see
Figure 14
= 50 V;
= 10 V; T
= 10 V; I
= 10 V; I
= 10 V; I
sup
j
D
D
D
≤ 175 °C
j(init)
GS
and
GS
= 30 A;
= 15 A;
= 15 A;
≤ 100 V;
Figure 13
Figure 12
= 50 Ω
Figure 2
= 10 V;
= 25 °C;
15
Suitable for standard level gate drive
Motor control
Server power supplies
Min
-
-
-
-55
-
-
-
-
-
Objective data sheet
Typ
-
-
-
-
-
9
30
-
21
Max
100
37
103
175
59
-
-
48
26.8
Unit
V
A
W
°C
mJ
nC
nC
mΩ
mΩ

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PSMN027-100PS,127 Summary of contents

Page 1

... PSMN027-100PS N-channel 100V 26.8 mΩ standard level MOSFET in TO220 Rev. 02 — 19 February 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... Ordering information Table 3. Ordering information Type number Package Name PSMN027-100PS TO-220AB PSMN027-100PS_2 Objective data sheet N-channel 100V 26.8 mΩ standard level MOSFET in TO220 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — ...

Page 3

... ° j(init Ω unclamped 003aae041 120 P der (%) 80 40 150 200 ( ° Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN027-100PS Min - - - Figure -55 - ≤ 100 V; - sup 100 150 Normalized total power dissipation as a function of mounting base temperature © ...

Page 4

... Objective data sheet N-channel 100V 26.8 mΩ standard level MOSFET in TO220 / Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN027-100PS 003a a e 042 = 10 μ 100 μ 100 (V) DS Min Typ Max - 0 ...

Page 5

... see Figure 14 and see Figure see Figure 14 and see Figure 14 and MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN027-100PS Min Typ Max Unit 100 - - 4 µA - 0.08 2 µ 100 100 mΩ mΩ ...

Page 6

... Figure /dt = 100 A/µ 003aae046 ( (A) D Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN027-100PS Min Typ - 14.4 - 11.4 - 29.6 - 8 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values © NXP B.V. 2010. All rights reserved. ...

Page 7

... V (V) GS Fig 8. 003aae044 5.5 5 4 (V) DS Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN027-100PS 120 R DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values 5 V GS(th) (V) 4 max ...

Page 8

... V (V) GS Fig 12. Normalized drain-source on-state resistance 003aae050 (A) D Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN027-100PS 3.2 a 2.4 1.6 0 factor as a function of junction temperature GS(pl) V GS(th GS1 ...

Page 9

... G Fig 16. Input, output and reverse transfer capacitances ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN027-100PS function of drain-source voltage; typical values 003aae052 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved. ...

Page 10

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN027-100PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 11

... N-channel 100V 26.8 mΩ standard level MOSFET in TO220 Data sheet status Change notice Objective data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN027-100PS Supersedes PSMN027-100PS_1 - © NXP B.V. 2010. All rights reserved ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN027-100PS © NXP B.V. 2010. All rights reserved ...

Page 13

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN027-100PS Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 February 2010 Document identifier: PSMN027-100PS_2 ...

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