BUK7640-100A,118 NXP Semiconductors, BUK7640-100A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK7640-100A,118
• Description: MOSFET N-CH 100V 37A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7640-100A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2293pF @ 25V
• Power - Max: 138W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 138000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056027118; BUK7640-100A /T3; BUK7640-100A /T3

Philips Semiconductors
December 1999
TrenchMOS
Standard level FET
current(I
Fig.18. Maximum permissible repetitive avalanche
VGS
0
100
I
AV
10
1
0.001
Fig.17. Avalanche energy test circuit.
AV
Tj prior to avalanche 150ºC
W
) versus avalanche time(t
DSS
RGS
0.01
0.5 LI
Avalanche Time, t
inductive loads.
transistor
D
2
BV
0.1
DSS
L
AV
(ms)
VDS
BV
T.U.T.
DSS
AV
1
25ºC
) for unclamped
shunt
R 01
V
DD
-
+
10
-ID/100
VDD
6
VGS
0
Fig.19. Switching test circuit.
RG
RD
VDS
T.U.T.
BUK7640-100A
Product specification
-
+
Rev 1.000
VDD