BUK7214-75B,118 NXP Semiconductors, BUK7214-75B,118 Datasheet
BUK7214-75B,118
Specifications of BUK7214-75B,118
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BUK7214-75B,118 Summary of contents
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... BUK7214-75B N-channel TrenchMOS standard level FET Rev. 02 — 3 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... N-channel TrenchMOS standard level FET Simplified outline mb 1 SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B Graphic symbol G mbb076 2 3 © NXP B.V. 2011. All rights reserved Version ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET Min - - -20 Figure 1; - Figure 1 - ≤ 10 µ -55 - ° Ω ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7214-75B Product data sheet = DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET 03nl20 = 10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7214-75B Product data sheet Conditions see −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET Min Typ Figure 71.4 03nk52 t p δ = ...
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... G(ext) j measured from drain to centre of die ; °C j measured from source lead to source bond pad ; ° ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B Min Typ Max = 25 ° -55 ° 0 4 500 - 0. 100 = 25 ° ...
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... V (V) DS Fig 6. 03aa35 g (S) typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET Drain-source on-state resistance as a function of gate-source voltage; typical values Forward transconductance as a function of drain current ...
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... Fig 10. Gate-source threshold voltage as a function of 03nl18 10 20 Label is V (V) GS 150 200 250 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2 ...
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... Fig 14. Input, output and reverse transfer capacitances 100 185 ° ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET 3000 C iss C 2000 C oss C 1000 rss 0 − function of drain-source voltage; typical values 03nl12 ...
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... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7214-75B v.2 20110203 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 February 2011 Document identifier: BUK7214-75B ...