PHB45NQ10T,118 NXP Semiconductors, PHB45NQ10T,118 Datasheet - Page 3

• Manufacturer Part Number: PHB45NQ10T,118
• Description: MOSFET N-CH 100V 47A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB45NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 150W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055802118::PHB45NQ10T /T3::PHB45NQ10T /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHB45NQ10T
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
AS
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
P
(%)
der
100
80
60
40
20
0
function of mounting base temperature
Normalized total power dissipation as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
non-repetitive avalanche
current
50
100
150
All information provided in this document is subject to legal disclaimers.
T
014aab202
mb
(°C)
200
Conditions
T
T
V
V
pulsed; T
T
T
pulsed; T
V
V
R
V
R
j
j
mb
mb
GS
GS
GS
sup
sup
GS
GS
Rev. 02 — 8 July 2010
≥ 25 °C; T
≤ 175 °C; T
= 25 °C
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 50 Ω
= 50 Ω; unclamped
≤ 25 V; unclamped; t
≤ 25 V; V
mb
mb
= 25 °C
= 25 °C
j
Fig 2.
≤ 175 °C
j
mb
mb
j(init)
GS
≥ 25 °C; R
= 100 °C
= 25 °C
= 10 V; T
(%)
= 25 °C; I
I
D
100
80
60
40
20
0
function of mounting base temperature
Normalized continuous drain current as a
0
N-channel TrenchMOS standard level FET
GS
p
j(init)
= 100 µs;
D
= 20 kΩ
= 40 A;
= 25 °C;
50
100
PHB45NQ10T
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
014aab203
mb
175
175
Max
100
100
20
33
47
188
150
47
188
260
47
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
A
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