IRLML5203TRPBF International Rectifier, IRLML5203TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLML5203TRPBF
• Description: MOSFET P-CH 30V 3A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLML5203TRPBF

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 1.25W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 98 mOhm @ 3A, 10V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.098Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 3A
• Power Dissipation: 1.25W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: Micro
• Current, Drain: -3 A
• Gate Charge, Total: 9.5 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 98 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 88 ns
• Time, Turn-on Delay: 12 ns
• Transconductance, Forward: 3.1 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Continuous Drain Current: 3A
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 165 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 11. Typical On-Resistance Vs. Gate
6
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
Fig 13a. Basic Gate Charge Waveform
V
4.0
G
Q
-V GS, Gate -to -Source Voltage (V)
6.0
GS
Voltage
8.0
Charge
Q
Q
GD
G
10.0
I D = -3.0A
12.0
14.0
16.0
0.40
0.30
0.20
0.10
0.00
Fig 12. Typical On-Resistance Vs. Drain
Fig 13b. Gate Charge Test Circuit
0
12V
V
GS
V GS = -4.5V
Same Type as D.U.T.
Current Regulator
.2µF
4
-I D , Drain Current (A)
50KΩ
-3mA
Current Sampling Resistors
Current
.3µF
I
G
8
V GS = -10V
D.U.T.
www.irf.com
I
D
12
+
-
V
DS
16