STD4NK50ZD STMicroelectronics, STD4NK50ZD Datasheet - Page 9
STD4NK50ZD
Manufacturer Part Number
STD4NK50ZD
Description
MOSFET N-CH 500V 3A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP4NK50ZD.pdf
(17 pages)
Specifications of STD4NK50ZD
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
310pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 Ohms
Forward Transconductance Gfs (max / Min)
1.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
22 ns
Minimum Operating Temperature
- 55 C
Rise Time
15.5 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5105-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD4NK50ZD
Manufacturer:
ST
Quantity:
12 500
Company:
Part Number:
STD4NK50ZD-1
Manufacturer:
ST
Quantity:
12 500
STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
3
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
circuit
Test circuit
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