STF2HNK60Z STMicroelectronics, STF2HNK60Z Datasheet - Page 3
![MOSFET N-CH 600V 2A TO-220FP](/photos/5/30/53057/to-220_fp_sml.jpg)
STF2HNK60Z
Manufacturer Part Number
STF2HNK60Z
Description
MOSFET N-CH 600V 2A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STF2HNK60Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220FP
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.8 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2 A
Power Dissipation
20000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
1A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
4.4ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STF2HNK60Z
Manufacturer:
ST
Quantity:
150 000
Company:
Part Number:
STF2HNK60Z
Manufacturer:
ST
Quantity:
5 000
Company:
Part Number:
STF2HNK60Z
Manufacturer:
ST
Quantity:
12 500
ELECTRICAL CHARACTERISTICS (T
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
C
V
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
oss eq.
t
t
I
I
I
C
SD
I
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
fs
RRM
RRM
DSS
GSS
I
Q
Q
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
gs
gd
r
r
(1)
g
rr
rr
(1)
(2)
is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
(3)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance V
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
= 0)
CASE
I
I
V
(see test circuit, Figure 23)
I
V
(see test circuit, Figure 23)
SD
SD
SD
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure
22)
V
V
(see, Figure 24)
DD
DD
D
DS
DS
GS
DS
GS
DS
DS
GS
DD
DD
GS
G
= 1mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 1.5 A, V
= 1.3 A, di/dt = 100 A/µs
= 1.3 A, di/dt = 100 A/µs
= 4.7
= 25V, T
= 25V, T
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10V, I
= 15 V
= 25V, f = 1 MHz, V
= 0V, V
= 300 V, I
= 480V, I
= 10V
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
V
GS
DS
I
j
j
D
D
D
GS
GS
= 25°C
= 150°C
D
= 0.7 A
D
= 0.7 A
= 50 µA
= 0
= 0V to 480V
= 1.5 A,
= 0
= 0.65 A,
= 10 V
C
= 125 °C
GS
= 0
Min.
Min.
Min.
600
3
Typ.
3.75
Typ.
Typ.
170
250
550
300
690
7.2
7.7
1.7
4.4
4.6
27
30
30
22
55
1
5
8
4
Max.
Max.
Max.
±10
4.5
1.5
1.6
50
10
1
8
6
Unit
Unit
Unit
µC
µC
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
3/16
V
V
S
A
A
V
A
A