IRF7701TRPBF International Rectifier, IRF7701TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7701TRPBF
• Description: MOSFET P-CH 12V 10A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7701TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 100nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 10A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 69 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Source-Drain Ratings and Characteristics

Electrical Characteristics @ T
‚
Notes:
I
I
I
V
t
Q
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
DSS
SM
S
rr
d(on)
r
d(off)
f
fs
SD
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
rr
g
gs
gd
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤
(BR)DSS
max. junction temperature.
2
/∆T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
When mounted on 1 inch square copper board, t<10 sec
-0.45 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
––– -0.006 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 5050 –––
––– 1520 –––
––– 1120 –––
–––
–––
-12
21
–––
––– 0.011
––– 0.015
––– 0.022
–––
–––
–––
–––
240
220
–––
––– -100
9.1
52
53
69
21
19
20
-1.2
–––
-1.2
–––
100
100
–––
–––
–––
–––
1.0
-25
-1.5
-80
78
80
14
32
V/°C Reference to 25°C, I
nC
nC
ns
nA
ns
pF
µA
V
S
V
Ω
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
D
= -8.0A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -10V, I
= -12V, V
= -9.6V, V
= -9.6V
= -6.0V
= 0V
= -8.0V
= 8.0V
= -4.5V‚
= -4.5V‚
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -1.5A
= -1.5A, V
D
D
D
GS
= -250µA
GS
= -10A
‚
= -10A ‚
= -8.5A ‚
= -7.0A ‚
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
G
= 70°C
= 0V ‚
D
S