IRF7701TRPBF International Rectifier, IRF7701TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7701TRPBF
• Description: MOSFET P-CH 12V 10A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7701TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 100nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 10A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 69 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8000
6000
4000
2000
4
100
0
0.1
10
1
1
0.2
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
Crss
Coss
-V DS , Drain-to-Source Voltage (V)
-V
Ciss
Drain-to-Source Voltage
0.4
SD
T = 150 C
Forward Voltage
J
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.6
°
T = 25 C
J
10
0.8
°
f = 1 MHZ
1.0
V
SHORTED
GS
1.2
= 0 V
100
1.4
1000
100
10
Fig 8. Maximum Safe Operating Area
10
1
8
6
4
2
0
0.1
0
T
T
Single Pulse
I =
D
A
J
Fig 6. Typical Gate Charge Vs.
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-10A
-V
Gate-to-Source Voltage
DS
°
20
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
40
BY R
V
DS
DS(on)
=-9.6V
FOR TEST CIRCUIT
60
SEE FIGURE
10
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100us
1ms
10ms
80
13
100
100