IRF7701TRPBF International Rectifier, IRF7701TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7701TRPBF
• Description: MOSFET P-CH 12V 10A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7701TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 100nC @ 4.5V
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 10A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 69 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
0.1
10
0.00001
10.0
1
Fig 9. Maximum Drain Current Vs.
8.0
6.0
4.0
2.0
0.0
D = 0.50
25
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
t , Rectangular Pulse Duration (sec)
125
°
1
0.01
150
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
d(on)
1
≤ 0.1 %
J
t
≤ 1
r
DM
x Z
1
thJA
P
2
DM
+ T
10
t
d(off)
A
t
1
t
t
2
f
-
+
100
5