IRLU3410PBF International Rectifier, IRLU3410PBF Datasheet - Page 5

MOSFET N-CH 100V 17A I-PAK

IRLU3410PBF

Manufacturer Part Number
IRLU3410PBF
Description
MOSFET N-CH 100V 17A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRLU3410PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 5V
Input Capacitance (ciss) @ Vds
800pF @ 25V
Power - Max
79W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Current, Drain
17 A
Gate Charge, Total
34 nC
Package Type
I-Pak (TO-251AA)
Polarization
N-Channel
Power Dissipation
79 W
Resistance, Drain To Source On
0.105 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
30 ns
Time, Turn-on Delay
7.2 ns
Transconductance, Forward
7.7 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±16 V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
155 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
15 A
Mounting Style
SMD/SMT
Gate Charge Qg
22.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLU3410PBF
www.irf.com
0.01
20
15
10
0.1
5
0
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
C
Case Temperature
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
IRLR/U3410PbF
t
r
J
≤ 0.1 %
≤ 1
DM
x Z
1
0.1
thJC
P
2
DM
+ T
t
d(off)
C
t
1
t
t
f
2
+
-
1
5

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