IXTA110N055T IXYS, IXTA110N055T Datasheet

no-image

IXTA110N055T

Manufacturer Part Number
IXTA110N055T
Description
MOSFET N-CH 55V 110A TO-263
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA110N055T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
3080pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
55 V
Continuous Drain Current
110 A
Power Dissipation
230 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
110
Rds(on), Max, Tj=25°c, (?)
0.0070
Ciss, Typ, (pf)
3080
Qg, Typ, (nc)
67
Trr, Typ, (ns)
70
Trr, Max, (ns)
-
Pd, (w)
230
Rthjc, Max, (k/w)
0.65
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
D25
LRMS
DM
AR
GSS
DSS
L
J
JM
stg
SOLD
GS(th)
DSS
DGR
GSM
AS
D
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
J
J
J
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
TM
DSS
, I
D
D
= 250 µA
= 100 µA
D
G
= 25 A, Notes 1, 2
DS
= 5 Ω
= 0 V
Preliminary Technical Information
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
IXTA110N055T
IXTP110N055T
JM
Min.
2.0
55
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
5.8
± 20
110
300
750
230
175
300
260
2.5
55
55
75
25
± 200
3
3
250
Max.
4.0
7.0
2
V/ns
m Ω
mJ
nA
µA
°C
°C
°C
°C
°C
µA
W
V
V
V
A
A
A
A
g
g
V
V
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
Primary- Side Switch
TO-263 (IXTA)
V
I
R
DC/DC Converters and Off-line UPS
High Current Switching
D25
TO-220 (IXTP)
G = Gate
S = Source
Applications
DSS
DS(on)
G
G
D
S
=
= 110
≤ ≤ ≤ ≤ ≤
S
D = Drain
TAB = Drain
7.0 mΩ Ω Ω Ω Ω
55
(TAB)
DS99625 (11/06)
(TAB)
A
V

Related parts for IXTA110N055T

IXTA110N055T Summary of contents

Page 1

... GS(th ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTA110N055T IXTP110N055T Maximum Ratings MΩ ± 20 110 75 300 JM 25 750 ≤ DSS 230 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 3 2.5 Characteristic Values Min. ...

Page 2

... Characteristic Values Min. Typ. Max. 110 300 JM 1.0 70 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA110N055T IXTP110N055T TO-263 (IXTA) Outline Pins Gate 2 - Drain Source 4, TAB - Drain nC Dim. Millimeter Inches nC Min. Max. Min. Max. ...

Page 3

... Value D Fig. 6. Drain Current vs. Case Temperature 120 110 T = 175ºC J 100 External Lead Current Limit for TO-263 & TO-220 25º -50 200 240 280 320 IXTA110N055T IXTP110N055T Fig. 2. Extended Output Characteristics @ 25ºC = 10V Volts DS Fig Normalized 55A Value DS(on) D vs. Junction Temperature V ...

Page 4

... 1.4 1.6 1.8 0 1.00 0.10 0. 0.00001 IXTA110N055T IXTP110N055T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 120 140 I - Amperes D Fig. 10. Gate Charge = 27. 25A D = 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds ...

Page 5

... GS 100 50 45.0 60 42.5 50 40 IXTA110N055T IXTP110N055T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º Ω 10V 27. 125º Amperes D Fig. 16. Resistive Turn-off - - - - d(off Ω 10V ...

Related keywords