IXTQ86N20T IXYS, IXTQ86N20T Datasheet - Page 6

• Manufacturer Part Number: IXTQ86N20T
• Description: MOSFET N-CH 200V 86A TO-3P
• Manufacturer: IXYS

Specifications of IXTQ86N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 480W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 86
• Rds(on), Max, Tj=25°c, (?): 0.029
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 90
• Trr, Typ, (ns): 140
• Trr, Max, (ns): -
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTA 86N20T
IXTP 86N20T
IXTQ 86N20T
TO-3P (IXTQ) Outline
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.