IRFB61N15DPBF International Rectifier, IRFB61N15DPBF Datasheet - Page 4

MOSFET N-CH 150V 60A TO-220AB

IRFB61N15DPBF

Manufacturer Part Number
IRFB61N15DPBF
Description
MOSFET N-CH 150V 60A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFB61N15DPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
32 mOhm @ 36A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
3470pF @ 25V
Power - Max
2.4W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
60 A
Gate Charge, Total
95 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
330 W
Resistance, Drain To Source On
0.032 Ohm
Resistance, Thermal, Junction To Case
0.45 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
28 ns
Time, Turn-on Delay
18 ns
Transconductance, Forward
22 S
Voltage, Breakdown, Drain To Source
150 V
Voltage, Drain To Source
150 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB61N15DPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB61N15DPBF
Manufacturer:
Schneider
Quantity:
2 000
Company:
Part Number:
IRFB61N15DPBF
Quantity:
9 000
Company:
Part Number:
IRFB61N15DPBF
Quantity:
25 780
IRFB61N15DPbF
100000
10000
4
1000
100
1000
10
100
0.1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 175 C
V
0.4
V DS , Drain-to-Source Voltage (V)
J
SD
Forward Voltage
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.6
10
T = 25 C
Coss
Ciss
Crss
0.8
J
f = 1 MHZ
°
1.0
100
V
GS
1.2
SHORTED
= 0 V
1.4
1000
1000
100
20
16
12
0.1
10
8
4
0
Fig 8. Maximum Safe Operating Area
1
0
I =
D
Fig 6. Typical Gate Charge Vs.
1
Tc = 25°C
Tj = 175°C
Single Pulse
37A
20
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
40
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
60
V
V
V
80
DS
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
= 120V
= 75V
= 30V
www.irf.com
100
100
100µsec
1msec
10msec
120
13
1000
140

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