STP75NF20 STMicroelectronics, STP75NF20 Datasheet - Page 3
![MOSFET N-CH 200V 75A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP75NF20
Manufacturer Part Number
STP75NF20
Description
MOSFET N-CH 200V 75A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STW75NF20.pdf
(16 pages)
Specifications of STP75NF20
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
34 mOhm @ 37A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
84nC @ 10V
Input Capacitance (ciss) @ Vds
3260pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
75A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
34mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.034 Ohms
Forward Transconductance Gfs (max / Min)
40 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
47 A to 75 A
Power Dissipation
190 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5958-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP75NF20
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP75NF20
Manufacturer:
ST
Quantity:
20 000
STB75NF20 - STP75NF20 - STW75NF20
1
Electrical ratings
Table 1.
1. I
Table 2.
1. When mounted on inch²FR-4 board (t < 10µs)
Table 3.
R
Symbol
Symbol
Symbol
thJ-pcb
I
SD
dv/dt
P
R
DM
Tstg
R
V
V
E
T
I
I
TOT
I
thJC
GS
thJA
T
DS
AR
D
D
AS
< 75A, di/dt < 400A/µs, V
J
(1)
l
(1)
Absolute maximum ratings
Thermal resistance
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Derating factor
Peak diode recovery voltage slope
Total dissipation at T
Operating junction temperature
Storage temperture
Avalanche characteristics
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
J
= 25°C, Id= Iar, Vdd=50V)
DD
Parameter
< 160
Parameter
Parameter
C
= 25°C
GS
J
max)
= 0)
C
C
= 25°C
= 100°C
TO-220/D²PAK
62.5
34
Max value
-50 to 150
Value
Value
± 20
1.52
200
300
190
0.66
205
300
75
47
15
37
Electrical ratings
TO-247
40
--
W/°C
V/ns
°C/W
°C/W
°C/W
Unit
Unit
Unit
°C
W
mJ
°C
V
V
A
A
A
A
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