IXTH96N20P IXYS, IXTH96N20P Datasheet - Page 3

• Manufacturer Part Number: IXTH96N20P
• Description: MOSFET N-CH 200V 96A TO-247
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTH96N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 96A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 4800pF @ 25V
• Power - Max: 600W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 96 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 96
• Rds(on), Max, Tj=25°c, (?): 0.024
• Ciss, Typ, (pf): 4800
• Qg, Typ, (nc): 145
• Trr, Typ, (ns): 160
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.25
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
100
100
4.3
3.7
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
4
1
0
0
0
V
25
GS
Fig. 3. Output Char acte r is tics
0.5
1
Fig. 5. R
Fig. 1. Output Characte r is tics
T
= 10V
50
J
= 175ºC
0.5 I
2
75
V
1
V
DS(on)
GS
I
D25
D S
V
100 125 150 175 200 225 250
D
V
@ 150
GS
T
= 10V
D S
- A mperes
@ 25
3
J
V alue vs . I
- V olts
= 125ºC
9V
= 10V
Norm alize d to
1.5
8V
7V
6V
- V olts
9V
T
º
º
C
C
4
J
= 25ºC
8V
7V
6V
5V
2
D
5
2.5
6
3
7
90
80
70
60
50
40
30
20
10
250
225
200
175
150
125
100
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0
75
50
25
3
2
1
0
-50
-50
Fig. 2. Exte nde d Output Char acte ris tics
0
External Lead C urrent Lim it
Fig. 4. R
-25
V
V alue vs . Junction Te m pe ratur e
-25
2
GS
IXTH 96N20P IXTQ 96N20P
Fig. 6. Dr ain Curr e nt vs . Cas e
= 10V
4
0
0
T
C
T
DS(on
J
- Degrees Centigrade
6
25
- Degrees Centigrade
25
Te m pe r ature
)
Nor m alize d to 0.5 I
V
@ 25
8
50
50
D S
I
D
10
= 96A
- V olts
º
75
C
75
12
IXTT 96N20P
100
100
14
I
D
V
= 48A
GS
125
125
16
= 10V
6V
9V
8V
7V
D25
150
150
18
175
175
20