IRFP4768PBF International Rectifier, IRFP4768PBF Datasheet

MOSFET N-CH 250V 93A TO-247AC

IRFP4768PBF

Manufacturer Part Number
IRFP4768PBF
Description
MOSFET N-CH 250V 93A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP4768PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17.5 mOhm @ 56A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
93A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
10880pF @ 50V
Power - Max
520W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
93 A
Power Dissipation
520 W
Mounting Style
Through Hole
Gate Charge Qg
180 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP4768PBF
Manufacturer:
IXYS
Quantity:
12 000
Company:
Part Number:
IRFP4768PBF
Manufacturer:
INFINEON
Quantity:
8 000
Company:
Part Number:
IRFP4768PBF
Manufacturer:
INFINEON
Quantity:
1 600
Company:
Part Number:
IRFP4768PBF
Manufacturer:
IR/INFINEON
Quantity:
2 216
Company:
Part Number:
IRFP4768PBF.,,33,TO247,IR
0
Applications
l
l
l
l
Benefits
l
l
l
l
www.irf.com
I
I
I
P
V
dv/dt
T
T
E
I
E
R
R
R
Absolute Maximum Ratings
Avalanche Characteristics
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θCS
θJA
@ T
@ T
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
SOA
@T
Symbol
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy c
Junction-to-Case ij
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Gate
G
D
S
IRFP4768PbF
See Fig. 14, 15, 22a, 22b
Typ.
0.24
–––
–––
V
R
I
D
10lbfxin (1.1Nxm)
DSS
D
DS(on)
TO-247AC
-55 to + 175
Drain
HEXFET Power MOSFET
Max.
370
520
± 20
300
770
3.4
D
93
66
24
G
typ.
max.
D
S
Max.
0.29
–––
40
Source
14.5m Ω
17.5m Ω
250V
93A
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
02/26/09
1

IRFP4768PBF Summary of contents

Page 1

... AS (Thermally limited) Avalanche Current Repetitive Avalanche Energy Thermal Resistance Symbol R Junction-to-Case ij θJC R Case-to-Sink, Flat Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G Gate Parameter @ 10V GS @ 10V GS Parameter IRFP4768PbF HEXFET Power MOSFET D V DSS R typ. DS(on) max TO-247AC G D Drain Max 370 520 3.4 ± 20 ...

Page 2

... IRFP4768PbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage R Internal Gate Resistance ...

Page 3

... BOTTOM 4.5V 100 1000 25° 100 1000 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage IRFP4768PbF 1000 TOP 100 BOTTOM 10 4.5V ≤ 60µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 3 56A 10V 3 ...

Page 4

... IRFP4768PbF 1000 100 175° 25° 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1000 100 175° 25° 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 9. Maximum Drain Current vs. Case Temperature 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4 ...

Page 5

... This is validated for every part type. jmax = Average power dissipation per single avalanche pulse. · Transient thermal resistance, see Figures 13 1/2 ( 1.3·BV· DT (ave 2DT/ [1.3·BV· ·t AS (AR) D (ave) av IRFP4768PbF 1 1.0E-01 is not exceeded. jmax (assumed as jmax thJC ] 5 ...

Page 6

... IRFP4768PbF 6.0 5.0 4.0 3 250µ 1.0mA 2 1.0A 1.0 0.0 -75 -50 - 100 125 150 175 Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature 56A 200V 25° 125° 200 400 di F /dt (A/µs) 6 600 800 1000 f 8000 56A 7000 200V 25°C 6000 125°C ...

Page 7

... G Voltage + Inductor Curent - ® HEXFET Power MOSFETs 15V DRIVER + Fig 22b. Unclamped Inductive Waveforms D.U. IRFP4768PbF P.W. Period D = Period P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% for N-Channel V (BR)DSS d(on) r Fig 23b ...

Page 8

... IRFP4768PbF TO-247AC package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & Data and specifications subject to change without notice. ...

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