IRFP4768PBF International Rectifier, IRFP4768PBF Datasheet
IRFP4768PBF
Specifications of IRFP4768PBF
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IRFP4768PBF Summary of contents
Page 1
... AS (Thermally limited) Avalanche Current Repetitive Avalanche Energy Thermal Resistance Symbol R Junction-to-Case ij θJC R Case-to-Sink, Flat Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G Gate Parameter @ 10V GS @ 10V GS Parameter IRFP4768PbF HEXFET Power MOSFET D V DSS R typ. DS(on) max TO-247AC G D Drain Max 370 520 3.4 ± 20 ...
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... IRFP4768PbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage R Internal Gate Resistance ...
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... BOTTOM 4.5V 100 1000 25° 100 1000 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage IRFP4768PbF 1000 TOP 100 BOTTOM 10 4.5V ≤ 60µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 3 56A 10V 3 ...
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... IRFP4768PbF 1000 100 175° 25° 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1000 100 175° 25° 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 9. Maximum Drain Current vs. Case Temperature 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4 ...
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... This is validated for every part type. jmax = Average power dissipation per single avalanche pulse. · Transient thermal resistance, see Figures 13 1/2 ( 1.3·BV· DT (ave 2DT/ [1.3·BV· ·t AS (AR) D (ave) av IRFP4768PbF 1 1.0E-01 is not exceeded. jmax (assumed as jmax thJC ] 5 ...
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... IRFP4768PbF 6.0 5.0 4.0 3 250µ 1.0mA 2 1.0A 1.0 0.0 -75 -50 - 100 125 150 175 Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature 56A 200V 25° 125° 200 400 di F /dt (A/µs) 6 600 800 1000 f 8000 56A 7000 200V 25°C 6000 125°C ...
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... G Voltage + Inductor Curent - ® HEXFET Power MOSFETs 15V DRIVER + Fig 22b. Unclamped Inductive Waveforms D.U. IRFP4768PbF P.W. Period D = Period P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% for N-Channel V (BR)DSS d(on) r Fig 23b ...
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... IRFP4768PbF TO-247AC package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & Data and specifications subject to change without notice. ...