IRFP4768PBF International Rectifier, IRFP4768PBF Datasheet - Page 2

• Manufacturer Part Number: IRFP4768PBF
• Description: MOSFET N-CH 250V 93A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP4768PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17.5 mOhm @ 56A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 10880pF @ 50V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 93 A
• Power Dissipation: 520 W
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
∆V
R
V
I
I
R
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Static @ T
Dynamic @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
IRFP4768PbF
Notes:

‚
ƒ
„
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
Symbol
Symbol
Symbol
(BR)DSS
above this value.
Repetitive rating; pulse width limited by max. junction
Limited by T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
temperature.
I
2
R
eff. (ER) Effective Output Capacitance (Energy Related) h –––
eff. (TR) Effective Output Capacitance (Time Related)g
SD
G
≤ 56A, di/dt ≤ 950A/µs, V
= 25Ω, I
/∆T
J
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 56A, V
J
, starting T
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.50mH
DD
≤ V
Parameter
Parameter
(BR)DSS
, T
g
J
- Q
≤ 175°C.
gd
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
…
†
‡
ˆ
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
250
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
––– 10880 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
C
C
as C
C
oss
oss
θ
θJC
oss
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
1480
2260
0.20
14.5
0.71
–––
–––
–––
–––
–––
–––
–––
180
108
160
110
700
210
510
830
–––
–––
–––
180
200
52
72
36
57
16
while V
DS
-100
17.5
–––
–––
250
100
–––
–––
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
370
–––
–––
–––
–––
–––
5.0
1.3
20
93
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0 MHz, See Fig. 5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 56A
= 56A, V
= 56A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 1.0Ω
= V
= 250V, V
= 250V, V
= 50V, I
=125V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V f
= 163V
= 10V f
= 0V
= 0V, V
= 0V, V
GS
, I
DSS
D
DS
D
DS
DS
S
D
D
= 250µA
DSS
= 56A, V
.
= 250µA
= 56A
=0V, V
= 56A f
GS
GS
= 0V to 200V h, See Fig. 11
= 0V to 200V g
Conditions
Conditions
Conditions
.
= 0V
= 0V, T
V
I
di/dt = 100A/µs f
F
R
= 56A
D
GS
= 200V,
GS
= 5mAc
= 10V
J
= 0V f
= 125°C
www.irf.com
G
S
D