IRFP4768PBF International Rectifier, IRFP4768PBF Datasheet - Page 4

• Manufacturer Part Number: IRFP4768PBF
• Description: MOSFET N-CH 250V 93A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP4768PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17.5 mOhm @ 56A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 10880pF @ 50V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 93 A
• Power Dissipation: 520 W
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFP4768PbF
4
1000
1000
20.0
18.0
16.0
14.0
12.0
10.0
100
100
0.1
8.0
6.0
4.0
2.0
0.0
0.1
10
10
1
1
Fig 11. Typical C
-50
0.0
0.0
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
0
V SD , Source-to-Drain Voltage (V)
V SD , Source-to-Drain Voltage (V)
V DS, Drain-to-Source Voltage (V)
T J = 175°C
T J = 175°C
Case Temperature
50
Forward Voltage
0.5
0.5
100
OSS
Stored Energy
150
T J = 25°C
T J = 25°C
1.0
1.0
200
V GS = 0V
V GS = 0V
250
300
1.5
1.5
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
3200
2800
2400
2000
1600
1200
100
320
300
280
260
240
800
400
10
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
10msec
Starting T J , Junction Temperature (°C)
DC
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
75
100
1msec
100µsec
TOP
BOTTOM 56A
100
125
150
I D
17A
12A
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1000
175