HAT2169H-EL-E Renesas Electronics America, HAT2169H-EL-E Datasheet - Page 3

• Manufacturer Part Number: HAT2169H-EL-E
• Description: MOSFET N-CH 40V 50A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2169H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6650pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HAT2169H
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
Rev.4.00 Sep 20, 2005 page 1 of 7
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
2. Value at Tch = 25 C, Rg
3. Tc = 25 C
= 2.8 m typ. (at V
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
10 s, duty cycle
Item
GS
= 10 V)
5
1%
1 2
50
3 4
I
D(pulse)
E
Pch
Symbol
I
AP
AR
V
V
Tstg
Tch
ch-C
I
GSS
I
DSS
DR
Note 2
D
Note 2
Note3
Note1
G
4
D
5
S S S
1 2 3
–55 to +150
Ratings
4.17
150
±20
200
40
50
50
30
72
30
1, 2, 3 Source
4
5
REJ03G0119-0400
Gate
Drain
Sep 20, 2005
Unit
C/W
mJ
W
V
V
A
A
A
A
C
C
(Ta = 25°C)
Rev.4.00