2SK3388(TE24L,Q) Toshiba, 2SK3388(TE24L,Q) Datasheet - Page 4

• Manufacturer Part Number: 2SK3388(TE24L,Q)
• Description: MOSFET N-CH 250V 20A SC-97
• Manufacturer: Toshiba

Specifications of 2SK3388(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 10V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: 2-9F1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
200
160
120
100
200
160
120
80
40
10
80
40
10
−80
0
0.1
0
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
−40
40
Drain-source voltage V
Case temperature Tc (°C)
Case temperature Tc (°C)
Capacitance – V
0
1
R
80
DS (ON)
P
D
40
– Tc
I D = 20 A
– Tc
120
80
10
DS
DS
(V)
10
160
120
5
C oss
C rss
C iss
160
100
200
4
100
500
400
300
200
100
0.1
10
−80
1
4
3
2
1
0
0
0
0
Common source
I D = 20 A
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
V GS = 10 V
V DS
−0.2
Dynamic input/output characteristics
−40
40
Drain-source voltage V
−0.4
Total gate charge Q
Case temperature Tc (°C)
5
0
V GS
V DD = 50 V
3
−0.6
1
80
I
DR
V
th
0
−0.8
– V
40
– Tc
DS
200
120
−1
100
g
80
DS
Common source
V DS = 10 V
I D = 1 mA
Pulse test
(nC)
−1.2
(V)
160
120
−1.4
2009-09-29
2SK3388
−1.6
160
200
20
16
12
8
4
0