2N7002ET1G ON Semiconductor, 2N7002ET1G Datasheet

2N7002ET1G

Manufacturer Part Number

2N7002ET1G

Description

MOSFET N-CH 60V 260MA SOT-23

Manufacturer

ON Semiconductor

Datasheet

1.2N7002ET1G.pdf (5 pages)

Specifications of 2N7002ET1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2.5 Ohm @ 240mA, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

260mA

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

0.81nC @ 5V

Input Capacitance (ciss) @ Vds

26.7pF @ 25V

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.5 Ohm @ 10 V

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.26 A

Power Dissipation

300 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

2N7002ET1G
2N7002ET1GOSTR

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Quantity:

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Download datasheet (96Kb)

2N7002E

Small Signal MOSFET

60 V, 310 mA, Single, N−Channel, SOT−23

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in

February, 2011 − Rev. 3

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current (Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current (t

Operating Junction and Storage

Temperature Range

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

Junction−to−Ambient − Steady State

(Note 1)

Junction−to−Ambient − t ≤ 5 s (Note 1)

Compliant

Low R

Small Footprint Surface Mount Package

Trench Technology

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Low Side Load Switch

Level Shift Circuits

DC−DC Converter

Portable Applications i.e. DSC, PDA, Cell Phone, etc.

sq [1 oz] including traces)

Steady State

t < 5 s

Steady State

t < 5 s

(1/8″ from case for 10 s)

DS(on)

Characteristic

Rating

= 10 ms)

= 25°C unless otherwise stated)

= 25°C

= 85°C

= 25°C

= 85°C

Symbol

, T

DSS

qJA

STG

−55 to

Value

+150

Max

±20

260

190

310

220

300

420

300

260

417

300

1.2

°C/W

Unit

°C

†For information on tape and reel specifications,

2N7002ET1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(BR)DSS

60 V

CASE 318

STYLE 21

Device

SOT−23

(Note: Microdot may be in either location)

ORDERING INFORMATION

Simplified Schematic

703

http://onsemi.com

(Pb−Free)

3.0 W @ 4.5 V

Package

2.5 W @ 10 V

SOT−23

N−Channel

(Top View)

DS(on)

= Device Code

= Date Code

= Pb−Free Package

Publication Order Number:

MARKING DIAGRAM

& PIN ASSIGNMENT

Gate

MAX

3000/Tape & Reel

703 MG

Drain

Shipping

2N7002E/D

(Note 1)

310 mA

MAX

Source

†

Related parts for 2N7002ET1G

2N7002ET1G Summary of contents

Page 1

... I 300 260 °C L Symbol Max Unit 417 °C/W R qJA 2N7002ET1G R 300 qJA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R MAX I MAX DS(on) D (Note ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

9.0 V 1.6 8.0 V 7.0 V 6.0 V 1.2 0.8 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 2 4 125°C GS ...

Page 4

C iss oss 10 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0.1 0.01 0.2 Figure 9. Diode Forward Voltage vs. Current TYPICAL CHARACTERISTICS ...

Page 5

... SCALE 10:1 inches 0.8 0.031 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 5 MILLIMETERS INCHES MIN NOM ...

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