2N7002ET1G ON Semiconductor, 2N7002ET1G Datasheet - Page 7

• Manufacturer Part Number: 2N7002ET1G
• Description: MOSFET N-CH 60V 260MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of 2N7002ET1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 260mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.81nC @ 5V
• Input Capacitance (ciss) @ Vds: 26.7pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.26 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N7002ET1G; 2N7002ET1GOSTR

Product Bulletin #16134
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MMBZ12VALT1G
MMBZ15VALT1
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Issue Date: 11 Jul 2008
Rev.07-02-06
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