2N7002ET1G ON Semiconductor, 2N7002ET1G Datasheet - Page 8

• Manufacturer Part Number: 2N7002ET1G
• Description: MOSFET N-CH 60V 260MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of 2N7002ET1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 260mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.81nC @ 5V
• Input Capacitance (ciss) @ Vds: 26.7pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.26 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N7002ET1G; 2N7002ET1GOSTR

Product Bulletin #16134
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MMBZ5226BLT1
MMBZ5226BLT1G
MMBZ5227BLT1G
MMBZ5228BLT1G
MMBZ5229BLT1G
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MMBZ5231BLT1
MMBZ5231BLT1G
MMBZ5231BLT3G
MMBZ5232BLT1G
MMBZ5232ELT1G
MMBZ5233BLT1
MMBZ5233BLT1G
MMBZ5234BLT1
MMBZ5234BLT1G
MMBZ5234ELT1G
MMBZ5235BLT1
MMBZ5235BLT1G
MMBZ5236BLT1G
MMBZ5237BLT1G
MMBZ5238BLT1G
MMBZ5239BLT1
MMBZ5239BLT1G
MMBZ5240BLT1
MMBZ5240BLT1G
MMBZ5241BLT1G
MMBZ5242BLT1
MMBZ5242BLT1G
MMBZ5242ELT1G
MMBZ5243BLT1
MMBZ5243BLT1G
MMBZ5244BLT1G
MMBZ5245BLT1
MMBZ5245BLT1G
MMBZ5245BLT3
MMBZ5246BLT1G
MMBZ5246ELT1G
MMBZ5247BLT1G
MMBZ5248BLT1
MMBZ5248BLT1G
MMBZ5248BLT3G
MMBZ5248ELT1G
MMBZ5249BLT1
MMBZ5249BLT1G
MMBZ5250BLT1G
MMBZ5251BLT1G
MMBZ5252BLT1G
MMBZ5252ELT1G
MMBZ5253BLT1G
Issue Date: 11 Jul 2008
Rev.07-02-06
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