AO4421 Alpha & Omega Semiconductor Inc, AO4421 Datasheet - Page 4

• Manufacturer Part Number: AO4421
• Description: MOSFET P-CH -60V -6.2A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4421

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 30V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1025-2

Rev 3: Nov 2010
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
100.0
10.0
8
6
4
2
0
1.0
0.1
0.01
0
0.1
10
0.00001
0.1
1
T
R
limited
J(Max)
Figure 9: Maximum Forward Biased Safe
DS(ON)
Figure 7: Gate-Charge Characteristics
=150° C, T
10
D=T
T
R
J,PK
Operating Area (Note E)
JA
0.0001
=40° C/W
on
=T
V
I
1s
D
/T
DS
=-6.2A
A
A
1
10s
+P
=25° C
=-30V
20
Single Pulse
-Q
DM
-V
g
DS
.Z
0.1s
(nC)
Figure 11: Normalized Maximum Transient Thermal Impedance
JA
(Volts)
DC
.R
0.001
30
JA
10ms
10
1ms
100 s
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.01
www.aosmd.com
10 s
Pulse Width (s)
100
50
0.1
3500
3000
2500
2000
1500
1000
40
30
20
10
500
0
0.001
0
0
1
C
Figure 10: Single Pulse Power Rating Junction-to-
0.01
oss
Figure 8: Capacitance Characteristics
10
P
D
T
on
0.1
20
C
10
T
rss
-V
DS
Ambient (Note E)
C
Pulse Width (s)
iss
(Volts)
1
30
T
T
100
J(Max)
A
=25° C
10
40
=150° C
100
50
1000
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1000
60