BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet
BSP322P L6327
Specifications of BSP322P L6327
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BSP322P L6327 Summary of contents
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SIPMOS ® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Type Package BSP322P PG-SOT-223 Maximum ratings =25 °C, unless otherwise specified ...
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Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Transconductance 1) Device ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation =f tot C 2 1 Safe operating area =f =25 ° parameter limited by on-state ...
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Typ. output characteristics =f =25 ° parameter - -3 Typ. transfer characteristics =f(V ...
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Drain-source on-state resistance = DS(on 1.5 1 0.5 typ. 0 -60 - Typ. capacitances C =f MHz DS ...
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Avalanche characteristics =25 Ω =f parameter: T j(start 0 Drain-source breakdown voltage =f =-250 µA V BR(DSS 120 115 110 105 100 95 ...
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Package Outline: PG-SOT-223 Footprint: Dimensions in mm Rev 1.04 Packaging: page 8 BSP322P 2011-04-05 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...