BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet - Page 2

• Manufacturer Part Number: BSP322P L6327
• Description: MOSFET P-CH 100V 1A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP322P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1V @ 380µA
• Gate Charge (qg) @ Vgs: 16.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 372pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000212229

Rev 1.04
1)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
minimal footprint,
steady state
6 cm
steady state
V
V
V
T
V
T
V
V
V
I
|V
I
D
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=-0.93 A
=-0.8 A
DS
=V
=-100 V, V
=-100 V, V
=0 V, I
=-20 V, V
=-10 V, I
=-4.5 V,
|>2|I
2
cooling area
GS
,I
D
2
|R
D
D
(one layer, 70 µm thick) copper area for drain
=-250 μA
=-380 µA
D
DS(on)max
DS
=-1 A
GS
GS
=0 V
=0 V,
=0 V,
1)
,
,
min.
-100
-2.0
0.7
-
-
-
-
-
-
-
Values
typ.
-1.5
-0.1
600
808
-10
-10
1.4
-
-
-
max.
1000
-100
-100
-1.0
115
800
70
-1
-
-
BSP322P
Unit
K/W
V
µA
nA
mΩ
S
2011-04-05