BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet - Page 2
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BSP322P L6327
Manufacturer Part Number
BSP322P L6327
Description
MOSFET P-CH 100V 1A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP322P_L6327.pdf
(9 pages)
Specifications of BSP322P L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
800 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
1V @ 380µA
Gate Charge (qg) @ Vgs
16.5nC @ 10V
Input Capacitance (ciss) @ Vds
372pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000212229
Rev 1.04
1)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
minimal footprint,
steady state
6 cm
steady state
V
V
V
T
V
T
V
V
V
I
|V
I
D
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=-0.93 A
=-0.8 A
DS
=V
=-100 V, V
=-100 V, V
=0 V, I
=-20 V, V
=-10 V, I
=-4.5 V,
|>2|I
2
cooling area
GS
,I
D
2
|R
D
D
(one layer, 70 µm thick) copper area for drain
=-250 μA
=-380 µA
D
DS(on)max
DS
=-1 A
GS
GS
=0 V
=0 V,
=0 V,
1)
,
,
min.
-100
-2.0
0.7
-
-
-
-
-
-
-
Values
typ.
-1.5
-0.1
600
808
-10
-10
1.4
-
-
-
max.
1000
-100
-100
-1.0
115
800
70
-1
-
-
BSP322P
Unit
K/W
V
µA
nA
mΩ
S
2011-04-05