BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet - Page 6
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BSP322P L6327
Manufacturer Part Number
BSP322P L6327
Description
MOSFET P-CH 100V 1A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP322P_L6327.pdf
(9 pages)
Specifications of BSP322P L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
800 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
1V @ 380µA
Gate Charge (qg) @ Vgs
16.5nC @ 10V
Input Capacitance (ciss) @ Vds
372pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000212229
Rev 1.04
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
1.5
0.5
10
10
10
DS
=f(T
2
1
0
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=-1 A; V
20
typ.
20
GS
40
=-10 V
-V
T
j
DS
[°C]
Ciss
Coss
98 %
Crss
60
[V]
60
100
80
140
100
page 6
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
0.01
0.1
10
=f(T
SD
1
3
2
1
0
-60
)
0
j
); V
j
GS
-20
=V
DS
0.5
20
; I
150 °C, typ
D
=-380 µA
-V
min.
T
max.
typ.
SD
j
60
[°C]
[V]
150 °C, 98%
25 °C, 98%
100
1
25 °C, typ
140
BSP322P
2011-04-05
180
1.5