BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet - Page 6

• Manufacturer Part Number: BSP322P L6327
• Description: MOSFET P-CH 100V 1A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP322P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1V @ 380µA
• Gate Charge (qg) @ Vgs: 16.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 372pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000212229

Rev 1.04
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
1.5
0.5
10
10
10
DS
=f(T
2
1
0
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=-1 A; V
20
typ.
20
GS
40
=-10 V
-V
T
j
DS
[°C]
Ciss
Coss
98 %
Crss
60
[V]
60
100
80
140
100
page 6
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
0.01
0.1
10
=f(T
SD
1
3
2
1
0
-60
)
0
j
); V
j
GS
-20
=V
DS
0.5
20
; I
150 °C, typ
D
=-380 µA
-V
min.
T
max.
typ.
SD
j
60
[°C]
[V]
150 °C, 98%
25 °C, 98%
100
1
25 °C, typ
140
BSP322P
2011-04-05
180
1.5