IPD30N06S2-23 Infineon Technologies, IPD30N06S2-23 Datasheet - Page 3
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IPD30N06S2-23
Manufacturer Part Number
IPD30N06S2-23
Description
MOSFET N-CH 55V 30A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD30N06S2-23.pdf
(8 pages)
Specifications of IPD30N06S2-23
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
901pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
23 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000252166
Rev. 1.0
1)
information see Application Note ANPS071E at www.infineon.com/optimos
2)
3)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an R
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
= 1.5 K/W the chip is able to carry 46 A at 25°C. For detailed
V
f =1 MHz
V
I
V
V
T
V
T
V
di
V
di
D
C
j
GS
DD
DD
GS
GS
R
R
=30 A, R
=25 °C
F
F
page 3
=25 °C
=30 V, I
=30 V, I
/dt =100 A/µs
/dt =100 A/µs
=0 V, V
=30 V, V
=44 V, I
=0 to 10 V
=0 V, I
Conditions
F
F
F
G
2
DS
=30 A,
=I
=I
D
=12
(one layer, 70 µm thick) copper area for drain
GS
=30 A,
=25 V,
S
S
=10 V,
,
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
901
283
104
5.4
0.9
10
23
24
18
11
25
39
48
5
-
-
IPD30N06S2-23
max.
120
1.3
15
32
30
7
-
-
-
-
-
-
-
-
-
-
2006-07-18
Unit
pF
ns
nC
V
A
V
ns
nC