SPP08P06P G Infineon Technologies, SPP08P06P G Datasheet - Page 4

• Manufacturer Part Number: SPP08P06P G
• Description: MOSFET P-CH 60V 8.8A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP08P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000446908

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Gate to source charge
V
Gate to drain charge
V
Gate charge total
V
Gate plateau voltage
V
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
Rev 1.5
DD
DD
DD
DD
C
C
GS
R
R
= 25 °C
= 25 °C
= -30 V, I
= -30 V, I
= -48 , I
= -48 V, I
= -48 V, I
= -48 , I
= 0 V, I
F
D
F
F =
D
= -8.8 A
= I
D
D
= -8.8 A
l
= -8.8 A
S
S
= -8.8 A
= -8.8 A, V
, d i
, d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
GS
= 0 to -10 V
j
= 25 °C, unless otherwise specified
Page 4
Symbol
Q
Q
Q
V
Symbol
I
I
V
t
Q
S
SM
rr
(plateau)
SD
gs
gd
g
rr
min.
min.
-
-
-
-
-
-
-
-
-
Values
Values
-3.85
-1.17
typ.
typ.
100
1.4
10
60
4
-
-
SPP08P06P G
-35.2
-1.55
max.
max.
-8.8
150
2.1
15
90
2009-04-14
6
-
Unit
nC
V
Unit
A
V
ns
nC