SPP08P06P G Infineon Technologies, SPP08P06P G Datasheet - Page 8

• Manufacturer Part Number: SPP08P06P G
• Description: MOSFET P-CH 60V 8.8A TO-220
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP08P06P G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 420pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000446908

Rev 1. . 5
Avalanche energy
E
para.: I
Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
= f ( T
80
60
50
40
30
20
10
0
-60
25
D
SPP08P06P
= -8.8 A , V
= f ( T
j
45
)
-20
65
j
)
20
85
DD
60
105
= -25 V, R
100
125
145
140
GS
°C
°C
T
T
= 25
j
j
185
200
W
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0
SPP08P06P
2
Gate
D
= -8.8 A pulsed
0,2
)
4
V
DS max
6
8
SPP08P06P G
10
0,8
2009-04-14
V
12
DS max
nC
Q
Gate
15