NDD02N60Z-1G ON Semiconductor, NDD02N60Z-1G Datasheet - Page 7

• Manufacturer Part Number: NDD02N60Z-1G
• Description: MOSFET N-CH 600V IPAK
• Manufacturer: ON Semiconductor

Specifications of NDD02N60Z-1G

• Package / Case: IPak, TO-251 (2 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 57W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 10.1nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Drain To Source Voltage (vdss): 600V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohms
• Forward Transconductance Gfs (max / Min): 1.7 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 57 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 10.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NDF02N60ZG
NDP02N60ZG
NDD02N60Z−1G
NDD02N60ZT4G
Order Number
Gate
NDP02N60ZG
NDF02N60ZG
AYWW
Drain
or
Source
MARKING DIAGRAMS
A
Y
WW
G
http://onsemi.com
TO−220FP
TO−220AB
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
DPAK
Gate
IPAK
= Location Code
= Year
= Work Week
= Pb−Free Package
1
Drain
Drain
7
4
2
3
Source
Gate
1
Drain
Drain 3
4
2
Source
2500 / Tape & Reel
In Development
50 Units / Rail
50 Units / Rail
75 Units / Rail
Shipping
†