NDD02N60Z-1G ON Semiconductor, NDD02N60Z-1G Datasheet - Page 7
![MOSFET N-CH 600V IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
NDD02N60Z-1G
Manufacturer Part Number
NDD02N60Z-1G
Description
MOSFET N-CH 600V IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NDF02N60ZG.pdf
(10 pages)
Specifications of NDD02N60Z-1G
Package / Case
IPak, TO-251 (2 straight leads + tab)
Mounting Type
Through Hole
Power - Max
57W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
10.1nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 50µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohms
Forward Transconductance Gfs (max / Min)
1.7 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
1.4 A
Power Dissipation
57 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
10.1 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDD02N60Z-1G
Manufacturer:
ON
Quantity:
3 225
Company:
Part Number:
NDD02N60Z-1G
Manufacturer:
ON Semiconductor
Quantity:
15
Company:
Part Number:
NDD02N60Z-1G
Manufacturer:
ON
Quantity:
12 500
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NDF02N60ZG
NDP02N60ZG
NDD02N60Z−1G
NDD02N60ZT4G
Order Number
Gate
NDP02N60ZG
NDF02N60ZG
AYWW
Drain
or
Source
MARKING DIAGRAMS
A
Y
WW
G
http://onsemi.com
TO−220FP
TO−220AB
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
DPAK
Gate
IPAK
= Location Code
= Year
= Work Week
= Pb−Free Package
1
Drain
Drain
7
4
2
3
Source
Gate
1
Drain
Drain 3
4
2
Source
2500 / Tape & Reel
In Development
50 Units / Rail
50 Units / Rail
75 Units / Rail
Shipping
†