IPB023N04N G Infineon Technologies, IPB023N04N G Datasheet - Page 7

• Manufacturer Part Number: IPB023N04N G
• Description: MOSFET N-CH 40V 90A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB023N04N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 95µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 10000pF @ 20V
• Power - Max: 167W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 1.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0023 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000391519

13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
100
t
10
45
40
35
30
25
20
1
10
-60
-1
R
T
T
I
-20
10
0
20
t
T
AV
j
10
60
[°C]
[µs]
1
100
10
2
140
180
10
3
14 Typ. gate charge
V
16 Gate charge waveforms
Q
V
12
10
V
Q
8
6
4
2
0
0
V
I
Q
20
40
Q
Q
gate
g
Q
[nC]
Q
60
IPB023N04N G
IPP023N04N G
80
Q
g ate
100