NTP5404NRG ON Semiconductor, NTP5404NRG Datasheet - Page 5

• Manufacturer Part Number: NTP5404NRG
• Description: MOSFET N-CH 40V 136A TO220AB
• Manufacturer: ON Semiconductor

Specifications of NTP5404NRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 136A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Input Capacitance (ciss) @ Vds: 7000pF @ 32V
• Power - Max: 167W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0045 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 136 A
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
1.0
0.1
0.00001
0.02
0.05
D = 0.5
0.1
SINGLE PULSE
0.2
0.01
0.0001
0.001
Figure 12. Thermal Response
http://onsemi.com
t, TIME (s)
5
P
(pk)
0.01
DUTY CYCLE, D = t
t
1
t
2
0.1
1
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
(t) = r(t) R
− T
C
= P
qJC
(pk)
1.0
1
R
qJC
(t)
10