IRF640 Vishay, IRF640 Datasheet - Page 6

• Manufacturer Part Number: IRF640
• Description: MOSFET N-CH 200V 18A TO-220AB
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF640

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.18Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 18A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Power Dissipation: 125W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.18 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant
• Other names: IRF640IR

IRF640, SiHF640
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
Document Number: 91036
S-81241-Rev. A, 07-Jul-08
D.U.T.
I
D
+
-
V
DS