IRF644N Vishay, IRF644N Datasheet - Page 5
![MOSFET N-CH 250V 14A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF644N
Manufacturer Part Number
IRF644N
Description
MOSFET N-CH 250V 14A TO-220AB
Manufacturer
Vishay
Datasheet
1.IRF644NS.pdf
(8 pages)
Specifications of IRF644N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
54nC @ 10V
Input Capacitance (ciss) @ Vds
1060pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF644N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF644N
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF644NS
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF644NSPBF
Manufacturer:
IR
Quantity:
20 000
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
91038_07
91038_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
0.1
10
10
1
1
2
3
2
0.0
1
Fig. 8 - Maximum Safe Operating Area
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
V
V
DS
SD
Operation in this area limited
T
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
J
= 175
10
T
T
Single Pulse
C
J
°
by R
C
= 175 °C
= 25 °C
0.8
DS(on)
T
J
= 25
10
2
°
1.2
C
V
100
1
10
GS
ms
ms
= 0 V
µs
10
1.6
3
91038_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
15
12
9
6
3
0
90 %
10 %
25
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
50
GS
t
d(on)
T
C
V
, Case Temperature (°C)
DS
t
75
r
100
D.U.T.
Vishay Siliconix
R
D
125
t
d(off)
t
f
150
+
-
www.vishay.com
V
DD
175
5