FDR838P Fairchild Semiconductor, FDR838P Datasheet - Page 209
FDR838P
Manufacturer Part Number
FDR838P
Description
MOSFET P-CH 20V 8A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR838P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 4.5V
Input Capacitance (ciss) @ Vds
3300pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR838P
Manufacturer:
FSC
Quantity:
20 000
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Discrete
Discrete IGBT (SMPS I)
HGT G
12
(Continued)
N 60
A
4
D
D: Integral Reverse Diode
S: Surface Mount
C: Current Sense
V: Voltage Clamping
1: First Generation
2: Second Generation
3: Third Generation
4: SMPS
N: NPT
A: 100ns
B: 200ns
C: 500ns
i.e., (600, 1200)
N-Channel or P-Channel
Rating at T
Rating at T
D: 3 Lead TO-251/TO-252
1S: 3 Lead TO-262/TO-263
P: 3 Lead TO-220
G: 3 Lead TO-247
1Y: 3-Lead TO-264
Options
Max Fall Time At T
Voltage Breakdown/10
Polarity
SMPS Rated Current
Gen. 1, 2, 3 Continuous Current
Package
Fairchild
C
C
= +75°C 100kHz Operation
= +110°C
8-16
J
= +150°C
E: ≤ 1µs
F: ≤ 2µs
G: ≤ 5µs
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