FDR840P Fairchild Semiconductor, FDR840P Datasheet - Page 151
FDR840P
Manufacturer Part Number
FDR840P
Description
MOSFET P-CH 20V 10A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR840P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 10A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 4.5V
Input Capacitance (ciss) @ Vds
4481pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDR840P
Manufacturer:
FSC
Quantity:
20 000
- Current page: 151 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Transient Voltage Suppressors (Continued)
P6KE13A
P6KE13CA
SA12A
SA12CA
P6KE15A
P6KE15CA
SA13A
SA13CA
P6KE16A
P6KE16CA
SA14A
SA14CA
SA15A
SA15CA
P6KE18A
P6KE18CA
SA16A
SA16CA
SA17A
SA17CA
P6KE20A
P6KE20CA
SA18A
SA18CA
P6KE22A
P6KE22CA
SA20A
SA20CA
P6KE24A
P6KE24CA
SA22A
SA22CA
P6KE27A
P6KE27CA
SA24A
Products
Voltage (V)
Stand-off
Reverse
V
11.1
11.1
12.8
12.8
13.6
13.6
15.3
15.3
17.1
17.1
18.8
18.8
20.5
20.5
23.1
23.1
RWM
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
V
12.4
12.4
13.3
13.3
14.3
14.3
14.4
14.4
15.2
15.2
15.6
15.6
16.7
16.7
17.1
17.1
17.8
17.8
18.9
18.9
20.9
20.9
22.2
22.2
22.8
22.8
24.4
24.4
25.7
25.7
26.7
Min
19
19
20
20
BR
Voltage (V)
Breakdown
Max
13.7
13.7
14.7
14.7
15.8
15.8
15.9
15.9
16.8
16.8
17.2
17.2
18.5
18.5
18.9
18.9
19.7
19.7
20.9
20.9
22.1
22.1
23.1
23.1
24.5
24.5
25.2
25.2
26.9
26.9
28.4
28.4
29.5
21
21
Condition
I
T
Test
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
18.2
19.9
21.2
21.5
22.5
23.2
24.4
25.2
27.6
27.7
29.2
30.6
32.4
33.2
35.5
37.5
38.9
2-146
18.2
19.9
21.2
21.5
22.5
23.2
24.4
25.2
27.6
27.7
29.2
30.6
32.4
33.2
35.5
37.5
V
26
26
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
25.1
25.1
23.2
23.2
21.5
21.5
20.6
20.6
19.2
19.2
18.1
18.1
17.2
17.2
15.4
15.4
18.1
18.1
14.1
14.1
12.8
PPM
33
33
28
28
27
27
24
24
22
22
20
20
16
16
Leakage @ V
I
R
Max Reverse
(µA)
5
5
1
1
5
5
1
1
5
5
1
1
1
1
5
5
1
1
1
1
5
5
1
1
5
5
1
1
5
5
1
1
5
5
1
RWM
Diodes and Rectifiers
P
PPM
600
600
500
500
600
600
500
500
600
600
500
500
500
500
600
600
500
500
500
500
600
600
500
500
600
600
500
500
600
600
500
500
600
600
500
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction
Related parts for FDR840P
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: