FDP5690 Fairchild Semiconductor, FDP5690 Datasheet
FDP5690
Manufacturer Part Number
FDP5690
Description
MOSFET N-CH 60V 32A TO-220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDB5690.pdf
(5 pages)
Specifications of FDP5690
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
1120pF @ 25V
Power - Max
58W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.027 Ohms
Forward Transconductance Gfs (max / Min)
32 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
32 A
Power Dissipation
58 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP5690
Manufacturer:
FAIRCHILD
Quantity:
276
Company:
Part Number:
FDP5690
Manufacturer:
FAIRCHILD
Quantity:
12 500
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
FDP5690/FDB5690
60V N-Channel PowerTrench
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
G
Fairchild Semiconductor International
J
DSS
GSS
D
, T
JC
JA
D
Device Marking
STG
S
FDB5690
FDP5690
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Total Power Dissipation @ T
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
TO-220
FDP Series
Derate above 25 C
Parameter
FDB5690
FDP5690
Device
- Continuous
- Pulsed
C
= 25 C
T
C
= 25°C unless otherwise noted
DS(on)
G
TM
MOSFET
Reel Size
S
Features
• 32 A, 60 V. R
• Critical DC electrical parameters specified at evevated
• Rugged internal source-drain diode can eliminate the
• High performance trench technology for extremely low
• 175 C maximum junction temperature rating.
Tube
13’’
need for an external Zener diode transient suppressor.
temperature.
R
DS(ON)
.
TO-263AB
FDB Series
FDP5690
D
R
DS(ON)
DS(ON)
Tape Width
= 0.027
= 0.032
24mm
N/A
-65 to +175
62.5
100
0.4
2.6
60
32
58
20
@ V
@ V
FDB5690
GS
GS
G
= 10 V
= 6 V.
Quantity
FDP5690/FDB5690 Rev. C
July 2000
800
45
D
S
Units
W/ C
C/W
C/W
W
V
V
A
C
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Datasheet:
FDP5690 Summary of contents
Page 1
... TO-263AB FDB Series T = 25°C unless otherwise noted C FDP5690 - Continuous - Pulsed = Device Reel Size 13’’ Tube July 2000 = 0.027 @ DS(ON 0.032 @ DS(ON FDB5690 Units 100 58 0 -65 to +175 2.6 C/W 62.5 C/W Tape Width Quantity 24mm 800 N/A 45 FDP5690/FDB5690 Rev ...
Page 2
... Test Conditions (Note1 32A 250 250 A, Referenced - 250 250 A, Referenced A,T = 125 1.0 MHz GEN (Note 2.0% Min Typ Max Units mV 100 nA -100 2 2 mV/ C -6.4 0.021 0.027 0.042 0.055 0.024 0.032 1120 pF 160 3 (Note 1) 0.92 1.2 V FDP5690/FDB5690 Rev. C ...
Page 3
... Figure 6. Body Diode Forward Voltage = 4.0V 4.5V 5.0V 6.0V 7.0V 10V DRAIN CURRENT (A) D Drain Current and Gate Voltage 16A 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDP5690/FDB5690 Rev 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum ,TIME (ms 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 2 100 SINGLE PULSE TIME (ms) Power Dissipation. R ( 2.6 °C/W JC P(pk ( Duty Cycle 100 1000 FDP5690/FDB5690 Rev 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...