FDP5690 Fairchild Semiconductor, FDP5690 Datasheet - Page 2

• Manufacturer Part Number: FDP5690
• Description: MOSFET N-CH 60V 32A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP5690

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 1120pF @ 25V
• Power - Max: 58W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.027 Ohms
• Forward Transconductance Gfs (max / Min): 32 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 58 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
1. Pulse Test: Pulse Width
Electrical Characteristics
Drain-Source Avalanche Ratings
W
I
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
Symbol
AR
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
DSS
GS(th)
DSS
T
T
DSS
J
J
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
300 s, Duty Cycle
Parameter
(Note 1)
(Note 1)
2.0%
(Note1)
T
c
= 25°C unless otherwise noted
V
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
I
V
D
D
D
DD
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
= 16 A, V
= 48 V, V
= V
= 5 V, I
= 25 V, V
= 15 V,
= 30 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= 10 V, I
= 6 V, I
= 10 V, V
= 30 V, I
= 10 V, R
= 0 V, I
Test Conditions
GS
, I
D
D
D
S
GS
D
D
D
D
D
= 16 A
= 16 A
= 250 A
= 250 A
GS
GS
DS
DS
GEN
= 16 A,T
= 32A
DS
= 16 A,
= 15 A
= 1 A,
= 10 V
= 0 V
= 0 V
= 5 V
= 0 V,
= 0 V
= 6
J
= 125 C
(Note 1)
(Note 1)
Min
60
50
2
0.021
0.042
0.024
Typ
1120
0.92
-6.4
160
2.4
3.9
6.8
61
32
80
10
24
10
23
9
0.027
0.055
0.032
Max
-100
100
1.2
80
32
18
18
39
18
33
32
1
4
FDP5690/FDB5690 Rev. C
Units
mV/ C
mV/ C
mJ
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
V
V
A
S
A
V
A