FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 103
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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Small Signal Transistors – General Purpose Transistors
SOT-223 NPN Configuration
BCP68
FZT649
NZT6714
PZT3904
PZT2222A
NZT6715
BCP54
BCP55
NZT560A
NZT560
NZT651
NZT44H8
FZT3019
PZTA06
NZT6717
BCP56
PZTA42
FJT44
SOT-223 PNP Configuration
BCP69
FZT749
NZT6726
NZT6727
PZT3906
FZT790A
BCP51
PZT2907A
BCP52
NZT6728
NZT660A
NZT660
NZT749
NZT751
NZT45H8
Products
V
CEO
300
400
20
25
30
40
40
40
45
60
60
60
60
60
80
80
80
80
20
25
30
40
40
40
45
60
60
60
60
60
60
60
60
(V)
V
CBO
140
800
300
100
500
30
35
40
60
75
50
45
60
80
80
80
80
30
35
40
50
40
50
45
60
60
60
80
80
80
80
–
–
(V)
V
EBO
5
5
5
6
6
5
5
5
5
5
5
–
7
4
5
5
6
6
5
5
5
5
5
5
5
5
5
5
5
5
5
5
–
(V)
Max (A)
0.2
1.5
1.5
1.5
0.5
1.2
1.2
0.5
0.3
1.5
0.2
0.8
1.2
1.2
I
1
3
2
1
3
3
4
8
–
1
3
–
3
–
3
3
4
4
8
C
Min
100
100
100
250
100
100
100
100
300
100
250
100
85
50
50
40
40
75
60
50
50
40
40
50
85
50
50
40
40
50
75
75
60
2-98
Discrete Power Products –
Max
375
300
250
300
300
250
250
250
550
300
250
250
200
375
300
250
250
300
250
300
250
250
550
300
80
–
–
–
–
–
–
–
–
h
FE
@V
10
10
10
10
10
CE
1
2
1
1
1
2
2
2
2
2
1
1
1
2
1
2
1
1
1
2
2
2
1
2
2
2
2
1
(V) @I
1000
1000
1000
1000
1000
1000
C
500
150
150
150
500
500
500
100
250
150
500
150
150
150
250
500
500
500
500
10
30
10
10
10
2
1
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.45
0.25
0.35
0.75
0.55
0.5
0.6
0.5
0.3
0.5
0.5
0.5
0.4
0.5
0.2
0.5
0.5
0.5
0.6
0.5
0.5
0.4
0.3
0.5
1.6
0.5
0.5
0.5
0.5
0.5
1
1
1
@I
V
CE (sat)
3000
1000
1000
3000
3000
2000
8000
3000
1000
1000
1000
3000
3000
2000
2000
8000
C
500
500
500
150
100
250
500
500
500
500
250
50
20
50
50
1
1
(mA) @I
B
100
300
100
100
300
300
200
400
100
300
100
100
100
300
300
200
200
400
50
50
50
15
10
10
50
50
50
50
10
5
2
5
5
(mA)
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