FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 53
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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TO-262 (I
IRFI624B
FQI4N25
IRFI614B
FQI3N25
FQI5N30
FQI3N30
FQI2N30
FQI11N40
IRFI740B
FQI7N40
FQI6N40C
FQI6N40
FQI5N40
FQI3N40
FQI6N45
FQI13N50C
FQI9N50
FQI9N50C
IRFI840B
FQI6N50
FQI5N50C
IRFI830B
FQI5N50
SSI1N50B
FQI12N60C
FQI12N60
FQI10N60C
SSI10N60B
FQI7N60
FQI8N60C
SSI7N60B
FQI6N60C
FQI4N60
FQI5N60C
SSI4N60B
SSI2N60B
SSI1N60B
FQI6N70
FQI7N80
Products
2
PAK) (Continued)
Min. (V)
BV
250
250
250
250
300
300
300
400
400
400
400
400
400
400
450
500
500
500
500
500
500
500
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
700
800
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
1.75
0.48
0.54
1.15
0.48
0.73
0.85
0.65
0.73
1.1
2.2
0.9
2.2
3.7
0.8
1.6
3.4
1.1
0.8
1.3
1.4
1.5
1.8
5.5
0.7
0.8
1.2
1.2
2.2
2.5
2.5
1.5
1.5
12
2
1
1
2
5
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-48
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
13.5
16.5
12.5
4.3
8.1
9.8
5.5
3.7
8.3
5.9
27
41
16
13
10
16
43
28
28
41
17
18
27
13
48
42
44
54
29
28
38
16
15
15
22
30
40
4
6
= 5V
I
D
11.4
10.5
4.1
3.6
2.8
2.8
5.4
3.2
2.1
5.5
4.5
2.5
6.2
5.5
4.5
4.5
1.5
9.5
7.4
7.5
5.5
4.4
4.5
6.2
6.6
10
13
12
7
9
9
2
6
9
8
5
7
4
1
(A)
MOSFETs
P
D
147
134
195
147
135
134
225
180
156
156
142
147
147
125
106
100
100
142
167
49
52
40
45
70
55
40
98
73
85
70
55
98
98
73
73
85
36
54
34
(W)
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