FQB5P20TM Fairchild Semiconductor, FQB5P20TM Datasheet - Page 5
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FQB5P20TM
Manufacturer Part Number
FQB5P20TM
Description
MOSFET P-CH 200V 4.8A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB5P20TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 2.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
430pF @ 25V
Power - Max
3.13W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2000 Fairchild Semiconductor International
-10V
-10V
-10V
-10V
12V
12V
t
t
p
p
-3mA
-3mA
200nF
200nF
R
R
R
R
G
G
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
V
V
I
I
I
DS
DS
DS
DS
Resistive Switching Test Circuit & Waveforms
D
D
D
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
Same Type
Same Type
DUT
DUT
as DUT
as DUT
R
R
L
L L
L
L
V
V
DD
DD
V
V
DD
DD
V
V
DS
DS
BV
BV
-10V
-10V
V
V
V
V
DSS
DSS
I
I
V
V
V
V
GS
GS
DD
DD
AS
AS
GS
GS
DS
DS
E
E
E
10%
10%
AS
AS
AS
Q
Q
90%
90%
=
=
=
gs
gs
t
t
d(on)
d(on)
----
----
----
----
1
1
1
1
2
2
2
2
t
t
L I
L I
L I
on
on
I
I
D
D
t
t
r
r
AS
AS
AS
(t)
(t)
t
t
2
2
2
Q
Q
p
p
Q
Q
g
g
gd
gd
--------------------
--------------------
Charge
Charge
BV
BV
BV
BV
DSS
DSS
DSS
DSS
- V
- V
t
t
d(off)
d(off)
DD
DD
t
t
Time
Time
off
off
t
t
f
f
V
V
Rev. A, May 2000
DS
DS
(t)
(t)