FQB6N40CTM Fairchild Semiconductor, FQB6N40CTM Datasheet

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FQB6N40CTM

Manufacturer Part Number
FQB6N40CTM
Description
MOSFET N-CH 400V 6A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQB6N40CTM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
625pF @ 25V
Power - Max
73W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2003 Fairchild Semiconductor Corporation
FQB6N40C/FQI6N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D
FQB Series
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
G
T
C
C
C
D
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
I
FQI Series
Features
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
2
-PAK
6A, 400V, R
DS(on)
FQB6N40C/FQI6N40C
Typ
--
--
--
-55 to +150
= 1.0
0.58
270
300
400
3.6
7.3
4.5
24
73
6
6
30
G
@V
!
!
Max
1.71
62.5
40
GS
QFET
! "
! "
= 10 V
!
!
!
!
S
D
"
"
"
"
"
"
Rev. A, August 2003
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQB6N40CTM Summary of contents

Page 1

... Symbol R Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA ©2003 Fairchild Semiconductor Corporation Features • 6A, 400V, R • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability 2 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 13.7 mH 50V 6A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 400 ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 1200 1000 800 C iss 600 C oss 400 C rss 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ 10V 20V GS ※ Note : ℃ ...

Page 4

... J 3. Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area Figure 11. Transient Thermal Response Curve ©2003 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.0 -100 100 150 200 o C] Figure 8. On-Resistance Variation 100 s ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions ©2003 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A, August 2003 ...

Page 8

... Package Dimensions 9.90 1.27 0.10 2.54 TYP 10.00 ©2003 Fairchild Semiconductor Corporation (Continued PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Dimensions in Millimeters Rev. A, August 2003 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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