RFP22N10 Fairchild Semiconductor, RFP22N10 Datasheet - Page 4

• Manufacturer Part Number: RFP22N10
• Description: MOSFET N-CH 100V 22A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of RFP22N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 20V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 7. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
1.50
1.25
1.00
0.75
0.50
0.25
2.0
1.5
1.0
0.5
0
0
-50
-50
I
V
D
GS
= 250µA
VOLTAGE vs JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
= V
DS
0
T
0
T
, I
J
J
D
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
= 250µA
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
50
50
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
100
100
100
75
50
25
0
Unless otherwise Specified (Continued)
20
V
o
o
DD
C)
C)
150
150
I
I
G(REF)
G(ACT)
= V
DSS
0.75V
0.50V
0.25V
DRAIN TO SOURCE VOLTAGE
200
200
DSS
DSS
DSS
I
G(REF)
R
V
VOLTAGE
L
t, TIME (µs)
SOURCE
GS
= 4.55Ω
GATE
TO
= 10V
= 1mA
0.75V
0.50V
0.25V
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
2500
2000
1500
1000
DSS
DSS
DSS
500
V
3.0
2.5
2.0
1.5
1.0
0.5
0
80
DD
0
0
-50
= V
I
I
G(REF)
G(ACT)
I
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
D
DSS
= 22A, V
RESISTANCE vs JUNCTION TEMPERATURE
C
V
5
RSS
DS
0
T
10
7.5
5
2.5
0
GS
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
= 10V
10
50
RFP22N10, RF1S22N10SM Rev. B
100
15
V
C
C
C
GS
ISS
RSS
OSS
o
= 0V, f = 1MHz
= C
C)
150
= C
≈ C
20
GS
GD
DS
C
+ C
C
OSS
+ C
ISS
GD
GS
200
25