FQB11N40CTM Fairchild Semiconductor, FQB11N40CTM Datasheet

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FQB11N40CTM

Manufacturer Part Number
FQB11N40CTM
Description
MOSFET N-CH 400V 10.5A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQB11N40CTM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
530 mOhm @ 5.25A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
1090pF @ 25V
Power - Max
135W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FQB11N40C/FQI11N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D
FQB Series
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
G
T
C
C
C
D
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
1
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
I
FQI Series
Features
• 10.5 A, 400V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 85pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
2
-PAK
FQB11N40C / FQI11N40C
Typ
-
-
-
DS(on)
-55 to +150
=
10.5
13.5
1.07
400
360
135
300
6.6
4.5
42
11
30
0.5
G
!
!
Max
0.93
62.5
40
@V
! "
! "
GS
!
!
!
!
S
October 2008
D
"
"
"
"
"
"
= 10 V
QFET
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
Rev. A1, Oct 2008
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQB11N40CTM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation Features • 10.5 A, 400V, R • Low gate charge ( typical 28 nC) • Low Crss ( typical 85pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 5.7 mH 10.5A 50V 10.5A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 400 320 125° ...

Page 3

... Drain Current and Gate Voltage 2000 1800 1600 1400 C iss 1200 C oss 1000 800 600 C rss 400 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test ℃ Figure 2. Transfer Characteristics 20V GS ※ Note : ℃ ...

Page 4

... Limited by R DS(on 100 ※ Notes : Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 μ 0.0 -100 100 150 200 o C] Figure 8. On-Resistance Variation 100 ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters 7 Dimensions in Millimeters Rev. A1, Oct 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK 8 Dimensions in Millimeters Rev. A1, Oct 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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