RFG40N10 Fairchild Semiconductor, RFG40N10 Datasheet - Page 2

• Manufacturer Part Number: RFG40N10
• Description: MOSFET N-CH 100V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of RFG40N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 20V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
Source to Drain Diode Specifications
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage
Reverse Recovery Time
1. T
2. Repetitive Rating: pulse width limited by maximum junction temperature.
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 1M Ω) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
T
C
T
= 25
C
= 25
o
C, Unless Otherwise Specified
o
C, Unless Otherwise Specified
SYMBOL
SYMBOL
V
r
Q
BV
t
Q
DS(ON)
Q
t
d(OFF)
GS(TH)
I
R
R
V
I
d(ON)
t
g(TOT)
GSS
t
DSS
OFF
g(TH)
g(10)
t
ON
SD
θ JC
θ JA
rr
DSS
t
t
r
f
I
I
I
V
V
V
V
I
V
R
(Figure 11)
V
V
V
TO-247
TO-220AB and TO-263AB
SD
SD
D
D
GS
DS
GS
GS
DD
L
GS
GS
GS
= 250 µ A, V
= 40A, V
= 2.5 Ω , V
= 40A
= 40A, dI
= V
= 80V,
= 0V
= ± 20V
= 50V, I
= 0V to 20V
= 0V to 10V
= 0V to 2V
DS
TEST CONDITIONS
, I
GS
TEST CONDITIONS
SD
D
GS
D
GS
= 10V (Figure 7)
= 20A,
J
= 250 µ A (Figure 8)
/dt = 100A/ µ s
, T
= 10V, R
= 0V (Figure 9)
DGR
DSS
STG
DM
pkg
GS
AS
D
D
L
V
T
T
I
R
(Figures 11)
D
C
C
DD
L
= 40A,
= 2.0 Ω
= 25
= 150
GS
= 80V,
= 4.2 Ω
o
C
o
C
RF1S40N10, RF1S40N10SM
RFG40N10, RFP40N10,
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
Figures 4, 12, 13
-55 to 175
MIN
-
-
1.07
100
100
± 20
100
160
300
260
MIN
100
40
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
TYP
-
-
17
30
42
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
0.040
MAX
± 100
200
0.94
1.5
100
300
150
7.5
50
80
30
62
4
1
-
-
-
-
-
UNITS
W/
UNITS
UNITS
o
o
o
W
o
o
o
V
V
V
A
A
C
C
C
o
C/W
C/W
C/W
µ A
µ A
nA
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
Ω
V
V
V
C